Low Temperature Relaxation of Donor Bound Electron Spins in ²⁸Si∶P

authored by

E. Sauter, N. V. Abrosimov, J. Hübner, M. Oestreich

Abstract

We measure the spin-lattice relaxation of donor bound electrons in ultrapure, isotopically enriched, phosphorus-doped Si28:P. The optical pump-probe experiments reveal at low temperatures extremely long spin relaxation times which exceed 20 h. The Si28:P spin relaxation rate increases linearly with temperature in the regime below 1 K and shows a distinct transition to a T9 dependence which dominates the spin relaxation between 2 and 4 K at low magnetic fields. The T7 dependence reported for natural silicon is absent. At high magnetic fields, the spin relaxation is dominated by the magnetic field dependent single phonon spin relaxation process. This process is well documented for natural silicon at finite temperatures but the Si28:P measurements validate additionally that the bosonic phonon distribution leads at very low temperatures to a deviation from the linear temperature dependence of Γ as predicted by theory.

Organisation(s)

Nanostructures Section
Institute of Solid State Physics
QuantumFrontiers

External Organisation(s)

Leibniz Institute for Crystal Growth (IKZ)

Type

Article

Journal

Physical review letters

Volume

126

No. of pages

5

ISSN

0031-9007

Publication date

30.03.2021

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

Electronic version(s)

https://doi.org/10.1103/PhysRevLett.126.137402 (Access: Open)
https://doi.org/10.48550/arXiv.2104.05633 (Access: Open)