Low Temperature Relaxation of Donor Bound Electron Spins in ²⁸Si∶P

verfasst von

E. Sauter, N. V. Abrosimov, J. Hübner, M. Oestreich

Abstract

We measure the spin-lattice relaxation of donor bound electrons in ultrapure, isotopically enriched, phosphorus-doped Si28:P. The optical pump-probe experiments reveal at low temperatures extremely long spin relaxation times which exceed 20 h. The Si28:P spin relaxation rate increases linearly with temperature in the regime below 1 K and shows a distinct transition to a T9 dependence which dominates the spin relaxation between 2 and 4 K at low magnetic fields. The T7 dependence reported for natural silicon is absent. At high magnetic fields, the spin relaxation is dominated by the magnetic field dependent single phonon spin relaxation process. This process is well documented for natural silicon at finite temperatures but the Si28:P measurements validate additionally that the bosonic phonon distribution leads at very low temperatures to a deviation from the linear temperature dependence of Γ as predicted by theory.

Organisationseinheit(en)

Abt. Nanostrukturen
Institut für Festkörperphysik
QuantumFrontiers

Externe Organisation(en)

Leibniz-Institut für Kristallzüchtung (IKZ)

Typ

Artikel

Journal

Physical review letters

Band

126

Anzahl der Seiten

5

ISSN

0031-9007

Publikationsdatum

30.03.2021

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik und Astronomie (insg.)

Elektronische Version(en)

https://doi.org/10.1103/PhysRevLett.126.137402 (Zugang: Offen)
https://doi.org/10.48550/arXiv.2104.05633 (Zugang: Offen)