Contacting a single nanometer-sized pinhole in the interfacial oxide of a poly-silicon on oxide (POLO) solar cell junction
- authored by
- Paul Bayerl, Nils Folchert, Johannes Bayer, Marvin Dzinnik, Christina Hollemann, Rolf Brendel, Robby Peibst, Rolf J. Haug
- Abstract
The electrical current through poly-Si on oxide (POLO) solar cells is mediated by tunneling and by nanometer-sized pinholes in the interfacial oxide. To distinguish the two processes, a POLO junction with a measured pinhole density of 1 × 107 cm−2 is contacted by different contact areas ranging from 1 μm2 to 2.5 × 105 μm2, and the temperature-dependent current–voltage curves are measured for the different devices. Model regressions to the measured curves, their temperature dependence, and the quantized value of contact resistances indicate average numbers of pinholes per device corresponding to the expected pinhole density. For the small contacts, the different transport processes can be studied separately, which facilitates further improvements in respect to the present-day POLO junctions. Single-pinhole transport is found for one of the contacts with an area of 1 μm2. Random telegraph noise observed for this device in the current–voltage characteristics shows a high sensitivity to single charges.
- Organisation(s)
-
Institute of Solid State Physics
Solar Energy Section
Laboratory of Nano and Quantum Engineering
Institute of Electronic Materials and Devices
QuantumFrontiers
- External Organisation(s)
-
Institute for Solar Energy Research (ISFH)
- Type
- Article
- Journal
- Progress in Photovoltaics: Research and Applications
- Volume
- 29
- Pages
- 936-942
- No. of pages
- 7
- ISSN
- 1062-7995
- Publication date
- 16.07.2021
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Condensed Matter Physics, Electrical and Electronic Engineering
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Electronic version(s)
-
https://doi.org/10.1002/pip.3417 (Access:
Open)