Contacting a single nanometer-sized pinhole in the interfacial oxide of a poly-silicon on oxide (POLO) solar cell junction

verfasst von
Paul Bayerl, Nils Folchert, Johannes Bayer, Marvin Dzinnik, Christina Hollemann, Rolf Brendel, Robby Peibst, Rolf J. Haug
Abstract

The electrical current through poly-Si on oxide (POLO) solar cells is mediated by tunneling and by nanometer-sized pinholes in the interfacial oxide. To distinguish the two processes, a POLO junction with a measured pinhole density of 1 × 107 cm−2 is contacted by different contact areas ranging from 1 μm2 to 2.5 × 105 μm2, and the temperature-dependent current–voltage curves are measured for the different devices. Model regressions to the measured curves, their temperature dependence, and the quantized value of contact resistances indicate average numbers of pinholes per device corresponding to the expected pinhole density. For the small contacts, the different transport processes can be studied separately, which facilitates further improvements in respect to the present-day POLO junctions. Single-pinhole transport is found for one of the contacts with an area of 1 μm2. Random telegraph noise observed for this device in the current–voltage characteristics shows a high sensitivity to single charges.

Organisationseinheit(en)
Institut für Festkörperphysik
Abt. Solarenergie
Laboratorium für Nano- und Quantenengineering
Institut für Materialien und Bauelemente der Elektronik
QuantumFrontiers
Externe Organisation(en)
Institut für Solarenergieforschung GmbH (ISFH)
Typ
Artikel
Journal
Progress in Photovoltaics: Research and Applications
Band
29
Seiten
936-942
Anzahl der Seiten
7
ISSN
1062-7995
Publikationsdatum
16.07.2021
Publikationsstatus
Veröffentlicht
Peer-reviewed
Ja
ASJC Scopus Sachgebiete
Elektronische, optische und magnetische Materialien, Erneuerbare Energien, Nachhaltigkeit und Umwelt, Physik der kondensierten Materie, Elektrotechnik und Elektronik
Ziele für nachhaltige Entwicklung
SDG 7 – Erschwingliche und saubere Energie
Elektronische Version(en)
https://doi.org/10.1002/pip.3417 (Zugang: Offen)