High-accuracy measurements of the quantum anomalous Hall effect for resistance metrology
- authored by
- Dinesh K. Patel, Mattias Kruskopf, Kajetan M. Fijalkowski, Martin Gotz, Eckart Pesel, Marcelo Jaime, Hansjorg Scherer, Steffen Schreyeck, Karl Brunner, Charles Gould, Laurens W. Molenkamp
- Abstract
This study explores the quantum anomalous Hall effect (QAHE) in V-doped (BiSb)2Te3, a magnetically-doped topological insulators. We use a precision resistance bridge based on a cryogenic current comparator to measure the QAHE at a zero magnetic field with unprecedented uncertainty (ΔRxy/RK ≤ 12 nΩ/Ω). Measurement results obtained at currents between 40 and 300 nA demonstrate the potential of this technology for quantum metrology, offering a path to a primary electrical resistance standard without external magnetic fields.
- External Organisation(s)
-
Physikalisch-Technische Bundesanstalt PTB
Julius Maximilian University of Würzburg
- Type
- Conference contribution
- Publication date
- 12.07.2024
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials, Instrumentation, Electrical and Electronic Engineering
- Electronic version(s)
-
https://doi.org/10.1109/cpem61406.2024.10646071 (Access:
Closed)