High-accuracy measurements of the quantum anomalous Hall effect for resistance metrology

authored by
Dinesh K. Patel, Mattias Kruskopf, Kajetan M. Fijalkowski, Martin Gotz, Eckart Pesel, Marcelo Jaime, Hansjorg Scherer, Steffen Schreyeck, Karl Brunner, Charles Gould, Laurens W. Molenkamp
Abstract

This study explores the quantum anomalous Hall effect (QAHE) in V-doped (BiSb)2Te3, a magnetically-doped topological insulators. We use a precision resistance bridge based on a cryogenic current comparator to measure the QAHE at a zero magnetic field with unprecedented uncertainty (ΔRxy/RK ≤ 12 nΩ/Ω). Measurement results obtained at currents between 40 and 300 nA demonstrate the potential of this technology for quantum metrology, offering a path to a primary electrical resistance standard without external magnetic fields.

External Organisation(s)
Physikalisch-Technische Bundesanstalt PTB
Julius Maximilian University of Würzburg
Type
Conference contribution
Publication date
12.07.2024
Publication status
Published
Peer reviewed
Yes
ASJC Scopus subject areas
Electronic, Optical and Magnetic Materials, Instrumentation, Electrical and Electronic Engineering
Electronic version(s)
https://doi.org/10.1109/cpem61406.2024.10646071 (Access: Closed)