Performance and Stability Assessment of Graphene-Based Quantum Hall Devices for Resistance Metrology

verfasst von: Atasi Chatterjee, Mattias Kruskopf, Martin Götz, Yefei Yin, Eckart Pesel, Pierre Gournay, Benjamin Rolland, Jan Kučera, Stephan Bauer, Klaus Pierz, Bernhard Schumacher, Hansjörg Scherer
Abstract: For more than three decades, GaAs/AlGaAs quantum Hall (QH) devices are being used as standards for the realization of the dc resistance unit ohm. Recently, the outstanding performance of graphene-based QH resistance (QHR) devices signifies an immense potential for a transition from GaAs to graphene-based devices in the field of resistance and also impedance metrology, with equally good accuracy. The recent developments in epitaxial graphene (EG) quality and fabrication of EG-based doped QHR devices and their improved performance tested in several national metrology institutes (NMIs) all over the world have demonstrated a more user-friendly dissemination of the unit ohm since they can be operated at relatively low magnetic fields and higher temperatures in comparison to existing GaAs-based devices. In this work, we have extensively tested the temporal stability of the magneto-transport properties of our graphene QH devices fabricated in the Physikalisch-Technische Bundesanstalt (PTB) and the resistance quantization performance by means of repeated high-accuracy cryogenic current comparator (CCC) measurements with several devices. Together with interlaboratory comparisons between NMIs, the performance and stability assessment demonstrate the readiness of the technology for calibration purposes in resistance metrology.
Organisationseinheit(en): QuantumFrontiers
Externe Organisation(en): Physikalisch-Technische Bundesanstalt (PTB)
Internationales Büro für Maß und Gewicht (BIPM)
Czech Metrology Institute (CMI)
Typ: Artikel
Journal: IEEE Transactions on Instrumentation and Measurement
Band: 72
Seiten: 1-6
ISSN: 0018-9456
Publikationsdatum: 2023
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Instrumentierung, Elektrotechnik und Elektronik
Elektronische Version(en): https://doi.org/10.1109/tim.2023.3280523 (Zugang: Geschlossen)

BibTeX

@article{6aae906c67b941d7aafd53f591e0959c,
title = "Performance and Stability Assessment of Graphene-Based Quantum Hall Devices for Resistance Metrology",
abstract = "For more than three decades, GaAs/AlGaAs quantum Hall (QH) devices are being used as standards for the realization of the dc resistance unit ohm. Recently, the outstanding performance of graphene-based QH resistance (QHR) devices signifies an immense potential for a transition from GaAs to graphene-based devices in the field of resistance and also impedance metrology, with equally good accuracy. The recent developments in epitaxial graphene (EG) quality and fabrication of EG-based doped QHR devices and their improved performance tested in several national metrology institutes (NMIs) all over the world have demonstrated a more user-friendly dissemination of the unit ohm since they can be operated at relatively low magnetic fields and higher temperatures in comparison to existing GaAs-based devices. In this work, we have extensively tested the temporal stability of the magneto-transport properties of our graphene QH devices fabricated in the Physikalisch-Technische Bundesanstalt (PTB) and the resistance quantization performance by means of repeated high-accuracy cryogenic current comparator (CCC) measurements with several devices. Together with interlaboratory comparisons between NMIs, the performance and stability assessment demonstrate the readiness of the technology for calibration purposes in resistance metrology.",
keywords = "CCC, epitaxial graphene (EG), metrology, quantum Hall (QH) effect, resistance standards",
author = "Atasi Chatterjee and Mattias Kruskopf and Martin G{\"o}tz and Yefei Yin and Eckart Pesel and Pierre Gournay and Benjamin Rolland and Jan Ku{\v c}era and Stephan Bauer and Klaus Pierz and Bernhard Schumacher and Hansj{\"o}rg Scherer",
note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2023",
doi = "10.1109/tim.2023.3280523",
language = "English",
volume = "72",
pages = "1--6",
journal = "IEEE Transactions on Instrumentation and Measurement",
issn = "0018-9456",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
}