Influence of the electron density on the giant negative magnetoresistance in two-dimensional electron gases

authored by: L. Bockhorn, D. Schuh, C. Reichl, W. Wegscheider, R. J. Haug
Abstract: In situ variation of the electron density via a metallic gate can control the disorder potentials in two-dimensional electron gases (2DEGs). This also influences the negative magnetoresistance at low magnetic fields, which is commonly observed in ultrahigh mobility 2DEGs. We investigate the temperature-dependent giant negative magnetoresistance (GNMR) as a function of the electron density for several temperatures and currents. Thereby, we find that the GNMR behavior depends decisively on the electron density. This observation is attributed to a changed disorder potential with electron density. In the case of higher electron densities, a nonlinear current dependency of the GNMR is observed, which could be described within the hydrodynamic regime.
Organisation(s): Faculty of Mathematics and Physics
External Organisation(s): University of Regensburg
ETH Zurich
Type: Article
Journal: Physical Review B
Volume: 109
ISSN: 2469-9950
Publication date: 13.05.2024
Publication status: Published
Peer reviewed: Yes
ASJC Scopus subject areas: Electronic, Optical and Magnetic Materials, Condensed Matter Physics
Electronic version(s): https://doi.org/10.1103/PhysRevB.109.205416 (Access: Open)