Quantum Hall Resistance Standards Based on Epitaxial Graphene with Different Doping Layer Sequence

authored by: Yefei Yin, Mattias Kruskopf, Atasi Chatterjee, Stephan Bauer, Teresa Tschirner, Martin Gotz, Frank Hohls, Klaus Pierz, Hans W. Schumacher
Abstract: Epitaxial graphene-based quantum Hall resistance standards (QHRS) can be operated at relaxed working conditions compared to conventional GaAs heterostructure devices. To reach the desired magnetic field working point, exact and reliable control of the charge carrier density of graphene plays a crucial role. This can be achieved by post-growth deposition of F4-TCNQ molecular dopants embedded within a polymer host layer. Here, we investigate QHRS with different sequences of such doping and undoped spacer layers to find a structure that is as simple and optimal as possible. By high-accuracy resistance measurements we found excellent metrological quality for all types of devices in a broad magnetic field range starting at 5 T and at 4.2 K. The resistance quantization is maintained over two years, so far, which gives further confidence in the robustness and long-term stability of such molecular-doped graphene-based QHRS.
External Organisation(s): Physikalisch-Technische Bundesanstalt PTB
Type: Conference contribution
Publication date: 08.07.2024
Publication status: Published
Peer reviewed: Yes
ASJC Scopus subject areas: Electronic, Optical and Magnetic Materials, Instrumentation, Electrical and Electronic Engineering
Electronic version(s): https://doi.org/10.1109/cpem61406.2024.10646126 (Access: Closed)

BibTeX

@inproceedings{f3ecd301a42045aeaf1b6e0a0a504b30,
title = "Quantum Hall Resistance Standards Based on Epitaxial Graphene with Different Doping Layer Sequence",
abstract = "Epitaxial graphene-based quantum Hall resistance standards (QHRS) can be operated at relaxed working conditions compared to conventional GaAs heterostructure devices. To reach the desired magnetic field working point, exact and reliable control of the charge carrier density of graphene plays a crucial role. This can be achieved by post-growth deposition of F4-TCNQ molecular dopants embedded within a polymer host layer. Here, we investigate QHRS with different sequences of such doping and undoped spacer layers to find a structure that is as simple and optimal as possible. By high-accuracy resistance measurements we found excellent metrological quality for all types of devices in a broad magnetic field range starting at 5 T and at 4.2 K. The resistance quantization is maintained over two years, so far, which gives further confidence in the robustness and long-term stability of such molecular-doped graphene-based QHRS.",
keywords = "epitaxial graphene, metrology, quantum Hall effect, Resistance standards",
author = "Yefei Yin and Mattias Kruskopf and Atasi Chatterjee and Stephan Bauer and Teresa Tschirner and Martin Gotz and Frank Hohls and Klaus Pierz and Schumacher, {Hans W.}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 Conference on Precision Electromagnetic Measurements (CPEM) ; Conference date: 08-07-2024 Through 12-07-2024",
year = "2024",
month = jul,
day = "8",
doi = "10.1109/cpem61406.2024.10646126",
language = "English",
series = "CPEM Digest (Conference on Precision Electromagnetic Measurements)",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 Conference on Precision Electromagnetic Measurements, CPEM 2024 - Proceedings",
address = "United States",
}