Low-temperature internal quantum efficiency of GaInN/GaN quantum wells under steady-state conditions

authored by: Shawutijiang Sidikejiang, Philipp Henning, Philipp Horenburg, Heiko Bremers, Uwe Rossow, Dirk Menzel, Andreas Hangleiter
Abstract: We compare the low-temperature photoluminescence (PL) intensities of a range of GaInN/GaN quantum well (QW) structures under identical excitation conditions, mounting the samples side by side. Normalizing the measured intensity to the absorbed power density in the QWs, we find that low-temperature PL efficiencies of several samples, which show close to 100% internal quantum efficiency (IQE) in time-resolved PL, saturate at nearly an identical value. Of course, this is strong indicative of being 100% IQE at low temperature for those efficient samples. Using the low-temperature PL efficiency as a 'Reference', on the other hand, we observe not only the effects of temperature-independent non-radiative losses on the low-temperature IQE, but also are able to determine the IQE of arbitrary samples on an absolute scale. Furthermore, we prove the experimental results by comparing the low-temperature efficiencies of a sample with an initial 100% IQE after intentionally introducing structural defects with argon-implantation.
Organisation(s): QuantumFrontiers
External Organisation(s): Technische Universität Braunschweig
Type: Article
Journal: Semiconductor Science and Technology
Volume: 37
Pages: 035017
ISSN: 0268-1242
Publication date: 31.01.2022
Publication status: Published
Peer reviewed: Yes
ASJC Scopus subject areas: Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Materials Chemistry, Electrical and Electronic Engineering
Electronic version(s): https://doi.org/10.1088/1361-6641/ac4b89 (Access: Open)
https://iopscience.iop.org/article/10.1088/1361-6641/ac4b89 (Access: Unknown)

BibTeX

@article{7e65253856ed43ff9dc6bacb017f14f1,
title = "Low-temperature internal quantum efficiency of GaInN/GaN quantum wells under steady-state conditions",
abstract = "We compare the low-temperature photoluminescence (PL) intensities of a range of GaInN/GaN quantum well (QW) structures under identical excitation conditions, mounting the samples side by side. Normalizing the measured intensity to the absorbed power density in the QWs, we find that low-temperature PL efficiencies of several samples, which show close to 100% internal quantum efficiency (IQE) in time-resolved PL, saturate at nearly an identical value. Of course, this is strong indicative of being 100% IQE at low temperature for those efficient samples. Using the low-temperature PL efficiency as a 'Reference', on the other hand, we observe not only the effects of temperature-independent non-radiative losses on the low-temperature IQE, but also are able to determine the IQE of arbitrary samples on an absolute scale. Furthermore, we prove the experimental results by comparing the low-temperature efficiencies of a sample with an initial 100% IQE after intentionally introducing structural defects with argon-implantation.",
keywords = "GaInN/GaN quantum wells, internal quantum efficiency, LEDs, PL efficiency",
author = "Shawutijiang Sidikejiang and Philipp Henning and Philipp Horenburg and Heiko Bremers and Uwe Rossow and Dirk Menzel and Andreas Hangleiter",
note = "Publisher Copyright: {\textcopyright} 2022 The Author(s). Published by IOP Publishing Ltd.",
year = "2022",
month = jan,
day = "31",
doi = "10.1088/1361-6641/ac4b89",
language = "English",
volume = "37",
pages = "035017",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "3",
}