Ablation threshold of GaN films for ultrashort laser pulses and the role of threading dislocations as damage precursors
- authored by
- Steffen Bornemann, Tobias Meyer, Tobias Voss, Andreas Waag
- Abstract
The laser-induced ablation threshold of c-plane GaN films upon exposure to ultrashort laser pulses was investigated for different wavelengths from the IR to the UV range and pulse widths between 0.34 and 10 ps. The one-pulse ablation threshold ranges between 0.15 and 3 J/cm
2 and shows an increase with the wavelength and the pulse width, except for deep UV pulses. Based on a rate equation model, we attribute this behavior to the efficiency of seed carrier generation by interband absorption. In addition, the multi-pulse ablation threshold was analyzed. Accumulation effects are more prominent in case of IR than with UV pulses and are closely linked to damage precursors. By a thorough structural investigation, we demonstrate that threading dislocations, especially those with a screw component, significantly contribute to laser damage, since they provide a variety of dispersed states within the band gap.
- Organisation(s)
-
QuantumFrontiers
- External Organisation(s)
-
Technische Universität Braunschweig
- Type
- Article
- Journal
- Optics express
- Volume
- 30
- Pages
- 47744-47760
- No. of pages
- 17
- ISSN
- 1094-4087
- Publication date
- 15.12.2022
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electronic version(s)
-
https://doi.org/10.1364/OE.471111 (Access:
Open)
https://opg.optica.org/abstract.cfm?URI=oe-30-26-47744 (Access: Unknown)
