Impact of optically induced carriers on the spin relaxation of localized electron spins in isotopically enriched silicon

authored by
Michael Beck, Nikolay V. Abrosimov, Jens Hübner, Michael Oestreich
Abstract

We investigate the influence of Auger electrons on the efficiency of optical spin pumping of donor bound electrons in isotopically enriched silicon by means of time-resolved pump-probe absorption spectroscopy. The experimentally observed drastic shortening of the spin relaxation time with increasing optical excitation results from inelastic scattering between free and localized electrons and an interconnected Orbach-type spin relaxation process. The maximal steady-state degree of polarization of the localized electron spins and the probe-beam-induced depolarization dynamics reveal that the fast, nonthermal energy dissipation of the conduction band electron distribution is detrimental for efficient optical spin initialization. In fact, each absorbed photon creates an Auger electron with enough energy to depolarize the spin of ≈30 donor bound electrons but the fast, nonthermal energy dissipation by phonons reduces this spin relaxation efficiency to approximately unity.

Organisation(s)
QuantumFrontiers
Institute of Solid State Physics
External Organisation(s)
Leibniz Institute for Crystal Growth (IKZ)
Type
Article
Journal
Physical Review B
Volume
99
ISSN
2469-9950
Publication date
03.06.2019
Publication status
Published
Peer reviewed
Yes
ASJC Scopus subject areas
Electronic, Optical and Magnetic Materials, Condensed Matter Physics
Electronic version(s)
https://doi.org/10.1103/physrevb.99.245201 (Access: Closed)