Temperature-dependent photo-elastic coefficient of silicon at 1550 nm
- authored by
- Johannes Dickmann, Jan Meyer, Mika Gaedtke, Stefanie Kroker
- Abstract
This paper presents a study on the temperature dependent photo-elastic coefficient in single-crystal silicon with (100) and (110) orientations at a wavelength of 1550 nm. The measurement of the photo-elastic coefficient was performed using a polarimetric scheme across a wide temperature range from 5 to 300 K. The experimental setup employed high-sensitivity techniques and incorporated automatic beam path correction, ensuring precise and accurate determination of the coefficient’s values. The results show excellent agreement with previous measurements at room temperature, specifically yielding a value of dn/ dσ= - 2.463 × 10 - 11 1/Pa for the (100) orientation. Interestingly, there is a significant difference in photo-elasticity between the different crystal orientations of approximately 50 % . The photo-elastic coefficient’s absolute value increases by approximately 40% with decreasing temperature down to 5 K. These findings provide valuable insights into the photo-elastic properties of silicon and its behavior under varying mechanical stress, particularly relevant for optomechanical precision experiments like cryogenic gravitational wave detectors and microscale optomechanical quantum sensors.
- External Organisation(s)
-
Technische Universität Braunschweig
Laboratory for Emerging Nanometrology Braunschweig (LENA)
National Metrology Institute of Germany (PTB)
- Type
- Article
- Journal
- Scientific reports
- Volume
- 13
- ISSN
- 2045-2322
- Publication date
- 12.2023
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- General
- Electronic version(s)
-
https://doi.org/10.1038/s41598-023-46819-0 (Access:
Open)