A Solid-State Source of Single and Entangled Photons at Diamond SiV-Center Transitions Operating at 80K

authored by

Xin Cao, Jingzhong Yang, Tom Fandrich, Yiteng Zhang, Eddy P. Rugeramigabo, Benedikt Brechtken, Rolf J. Haug, Michael Zopf, Fei Ding

Abstract

Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices that incorporate the advantages of both systems. Here we report the first GaAs/AlGaAs quantum dots grown by the droplet etching and nanohole infilling method, emitting single photons with a narrow wavelength distribution (736.2 ± 1.7 nm) close to the zero-phonon line of silicon-vacancy centers. Polarization entangled photons are generated via the biexciton-exciton cascade with a fidelity of (0.73 ± 0.09). High single photon purity is maintained from 4 K (g⁽²⁾(0) = 0.07 ± 0.02) up to 80 K (g⁽²⁾(0) = 0.11 ± 0.01), therefore making this hybrid system technologically attractive for real-world quantum photonic applications.

Organisation(s)

Institute of Solid State Physics
Laboratory of Nano and Quantum Engineering

Type

Article

Journal

Nano letters

Volume

23

Pages

6109-6115

No. of pages

7

ISSN

1530-6984

Publication date

12.07.2023

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Bioengineering, Chemistry(all), Materials Science(all), Condensed Matter Physics, Mechanical Engineering

Electronic version(s)

https://doi.org/10.48550/arXiv.2304.14170 (Access: Open)
https://doi.org/10.1021/acs.nanolett.3c01570 (Access: Open)