Temperature dependence of the band gap of Si 28:P at very low temperatures measured via time-resolved optical spectroscopy

authored by: E. Sauter, N. V. Abrosimov, J. Hübner, M. Oestreich
Abstract: We measure the temperature dependence of the indirect band gap of isotopically purified Si28:P in the regime from 0.1 K to 3 K by high-resolution absorption spectroscopy of the donor bound exciton transition. The measurements increase the up-to-date precision of the temperature-dependent band gap change by more than one order of magnitude and reveal a T4 dependence which is about a factor of two less than observed in previous measurements. Such a T4 dependence is predicted by theory, but the absolute values differ between our experiment and the most up-to-date calculations by a factor of 30, corroborating that the electron-phonon interaction at low temperatures is still not correctly included into theory. What is more, the ability of such very high-precision band-gap measurements facilitates the use of time- and spatially resolved Si28:P absorption as a contactless, local thermometer and electric field sensor with a demonstrated time resolution of milliseconds.
Organisation(s): Institute of Solid State Physics
External Organisation(s): Leibniz Institute for Crystal Growth (IKZ)
Type: Article
Journal: Physical Review Research
Volume: 5
No. of pages: 10
ISSN: 2643-1564
Publication date: 15.03.2023
Publication status: Published
Peer reviewed: Yes
ASJC Scopus subject areas: Physics and Astronomy(all)
Electronic version(s): https://doi.org/10.1103/PhysRevResearch.5.013182 (Access: Open)

BibTeX

@article{1e9a893d12c84048967338bc947f4f98,
title = "Temperature dependence of the band gap of Si 28:P at very low temperatures measured via time-resolved optical spectroscopy",
abstract = "We measure the temperature dependence of the indirect band gap of isotopically purified Si28:P in the regime from 0.1 K to 3 K by high-resolution absorption spectroscopy of the donor bound exciton transition. The measurements increase the up-to-date precision of the temperature-dependent band gap change by more than one order of magnitude and reveal a T4 dependence which is about a factor of two less than observed in previous measurements. Such a T4 dependence is predicted by theory, but the absolute values differ between our experiment and the most up-to-date calculations by a factor of 30, corroborating that the electron-phonon interaction at low temperatures is still not correctly included into theory. What is more, the ability of such very high-precision band-gap measurements facilitates the use of time- and spatially resolved Si28:P absorption as a contactless, local thermometer and electric field sensor with a demonstrated time resolution of milliseconds.",
author = "E. Sauter and Abrosimov, {N. V.} and J. H{\"u}bner and M. Oestreich",
note = "Funding Information: This work was funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany's Excellence Strategy - EXC-2123 QuantumFrontiers - 390837967, Research Training Group 1991, OE-177/10-2, and OE-177/12-1. ",
year = "2023",
month = mar,
day = "15",
doi = "10.1103/PhysRevResearch.5.013182",
language = "English",
volume = "5",
journal = "Physical Review Research",
issn = "2643-1564",
publisher = "American Physical Society",
number = "1",
}