Wafer-scale transfer route for top–down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique

verfasst von: Nursidik Yulianto, Andam Deatama Refino, Alina Syring, Nurhalis Majid, Shinta Mariana, Patrick Schnell, Ruri Agung Wahyuono, Kuwat Triyana, Florian Meierhofer, Winfried Daum, Fatwa F. Abdi, Tobias Voss, Hutomo Suryo Wasisto, Andreas Waag
Abstract: The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on flexible substrates offers opportunities for applications beyond rigid solid-state lighting (e.g., for wearable optoelectronics and bendable inorganic displays). Here, we report on a fast physical transfer route based on femtosecond laser lift-off (fs-LLO) to realize wafer-scale top–down GaN nanoLED arrays on unconventional platforms. Combined with photolithography and hybrid etching processes, we successfully transferred GaN blue nanoLEDs from a full two-inch sapphire substrate onto a flexible copper (Cu) foil with a high nanowire density (~10⁷ wires/cm²), transfer yield (~99.5%), and reproducibility. Various nanoanalytical measurements were conducted to evaluate the performance and limitations of the fs-LLO technique as well as to gain insights into physical material properties such as strain relaxation and assess the maturity of the transfer process. This work could enable the easy recycling of native growth substrates and inspire the development of large-scale hybrid GaN nanowire optoelectronic devices by solely employing standard epitaxial LED wafers (i.e., customized LED wafers with additional embedded sacrificial materials and a complicated growth process are not required).
Externe Organisation(en): Technische Universität Braunschweig
Lembaga Ilmu Pengetahuan Indonesia
Institut Teknologi Sumatera (ITERA)
Technische Universität Clausthal
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH
Institut Teknologi Sepuluh Nopember
Gadjah Mada University
Typ: Artikel
Journal: Microsystems and Nanoengineering
Band: 7
Publikationsdatum: 12.2021
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Atom- und Molekularphysik sowie Optik, Werkstoffwissenschaften (sonstige), Physik der kondensierten Materie, Wirtschaftsingenieurwesen und Fertigungstechnik, Elektrotechnik und Elektronik
Elektronische Version(en): https://doi.org/10.1038/s41378-021-00257-y (Zugang: Offen)

BibTeX

@article{d2a0e748d005429fa15e61a45dbe8406,
title = "Wafer-scale transfer route for top–down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique",
abstract = "The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on flexible substrates offers opportunities for applications beyond rigid solid-state lighting (e.g., for wearable optoelectronics and bendable inorganic displays). Here, we report on a fast physical transfer route based on femtosecond laser lift-off (fs-LLO) to realize wafer-scale top–down GaN nanoLED arrays on unconventional platforms. Combined with photolithography and hybrid etching processes, we successfully transferred GaN blue nanoLEDs from a full two-inch sapphire substrate onto a flexible copper (Cu) foil with a high nanowire density (~107 wires/cm2), transfer yield (~99.5%), and reproducibility. Various nanoanalytical measurements were conducted to evaluate the performance and limitations of the fs-LLO technique as well as to gain insights into physical material properties such as strain relaxation and assess the maturity of the transfer process. This work could enable the easy recycling of native growth substrates and inspire the development of large-scale hybrid GaN nanowire optoelectronic devices by solely employing standard epitaxial LED wafers (i.e., customized LED wafers with additional embedded sacrificial materials and a complicated growth process are not required).",
author = "Nursidik Yulianto and Refino, {Andam Deatama} and Alina Syring and Nurhalis Majid and Shinta Mariana and Patrick Schnell and Wahyuono, {Ruri Agung} and Kuwat Triyana and Florian Meierhofer and Winfried Daum and Abdi, {Fatwa F.} and Tobias Voss and Wasisto, {Hutomo Suryo} and Andreas Waag",
note = "Funding information: This work was funded in part by the Lower Saxony Ministry for Science and Culture (N-MWK) within the group of “LENA-OptoSense”, in part by the European Union{\textquoteright}s Horizon 2020 research and innovation program within the project of “ChipScope—Overcoming the Limits of Diffraction with Super-Resolution Lighting on a Chip” under grant agreement no. 737089, and in part by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) within “Excellence Strategy of EXC-2123 QuantumFrontiers— 390837967”. The authors thank Christoph Margenfeld, Irene Manglano Clavero, and Jana Hartmann for GaN LED wafer preparation in the ec2. Nursidik Yulianto, Nurhalis Majid, and Andam Deatama Refino acknowledge the Ministry of Research, Technology and Higher Education of the Republic of Indonesia (RISTEKDIKTI) for the Ph.D. scholarships of RISET-Pro under no. 34/ RISET-Pro/FGS/III/2019, RISET-Pro under no. 35/RISET-Pro/FGS/III/2019, and BPP-LN under no. T/912/D3.2/KD.02.01/2019. Support from the Indonesian-German Centre for Nano and Quantum Technologies (IG-Nano) is also acknowledged. Alina Syring gratefully acknowledges support by the DFG Research Training Group GrK1952/1 “Metrology for Complex Nanosystems” and the “Braunschweig International Graduate School of Metrology (B-IGSM)”. Florian Meierhofer and Tobias Voss also acknowledge financial support from the strategic research initiative “Quantum-and Nanometrology (QUANOMET)”. The authors thank Angelika Schmidt, Juliane Breitfelder, Aileen Michalski, and Diana Herz for their technical support during the experiments and Steffen Bornemann for his assistance with the fs-laser micromachining setup development.",
year = "2021",
month = dec,
doi = "10.1038/s41378-021-00257-y",
language = "English",
volume = "7",
journal = "Microsystems and Nanoengineering",
issn = "2055-7434",
publisher = "Nature Publishing Group",
number = "1",
}