A zero external magnetic field quantum standard of resistance at the 10⁻⁹ level

verfasst von

D. K. Patel, K. M. Fijalkowski, M. Kruskopf, N. Liu, M. Götz, E. Pesel, M. Jaime, M. Klement, S. Schreyeck, K. Brunner, C. Gould, L. W. Molenkamp, H. Scherer

Abstract

The quantum anomalous Hall effect is of potential use in metrology as it provides access to Hall resistance quantization in terms of the von Klitzing constant (R_K = h/e², where h is Planck’s constant and e the elementary charge) at zero external magnetic field. However, accessing the effect is challenging because it requires low temperatures (typically below 50 mK) and low bias currents (typically below 1 µA). Here we report Hall resistance quantization measurements in the quantum anomalous Hall effect regime on a device based on the magnetic topological insulator V-doped (Bi,Sb)₂Te₃. We show that the relative deviation of the Hall resistance from R_K at zero external magnetic field is (4.4 ± 8.7) nΩ Ω⁻¹ when extrapolated to zero measurement current and (8.6 ± 6.7) nΩ Ω⁻¹ when extrapolated to zero longitudinal resistivity (each with combined standard uncertainty, k = 1). This precision and accuracy at the nΩ Ω⁻¹ level (or 10⁻⁹ of relative uncertainty) reach the thresholds required for relevant metrological applications and establish a zero external magnetic field quantum standard of resistance, which is necessary for the integration of quantum-based voltage and resistance standards into a single universal quantum electrical reference.

Externe Organisation(en)

Physikalisch-Technische Bundesanstalt (PTB)
Julius-Maximilians-Universität Würzburg

Typ

Artikel

Journal

Nature Electronics

Publikationsdatum

04.12.2024

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Instrumentierung, Elektrotechnik und Elektronik

Elektronische Version(en)

https://doi.org/10.1038/s41928-024-01295-w (Zugang: Unbekannt)