Легування від CDW до топологічної надпровідності: роль дефектів у розсіюванні фононів у нецентросиметричному Pb_xTaSe₂

verfasst von

A. Glamazda, A. Sharafeev, R. Bohle, P. Lemmens, K. Y. Choi, F. C. Chou, R. Sankar

Abstract

The vibrational and electronic properties of the Pb-doped dichalcogenide Pb_xTaSe₂ (x = 0, 0.25, 0.33, 0.5, 0.75, and 1) have been investigated using Raman scattering experiments. A marked variation of the main vibrational modes with Pb concentration x is observed. The concentration dependence of the vibrational modes resembles the dependence of the vibrational modes in TaSe₂ on the number of crystallographic layers along the c-axis direction. The temperature and polarization dependences of Raman spectra of Pb_xTaSe₂ revealed additional broad modes in the low-frequency regime, which are discussed in the context of the remnant charge density wave, induced disorder, or PbSe phase formed in the interface of Pb and TaSe₂ layers.

Externe Organisation(en)

B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine
Technische Universität Braunschweig
Sungkyunkwan University
Academia Sinica (AS)

Typ

Artikel

Journal

Fizika Nizkikh Temperatur

Band

47

Seiten

994-1002

Anzahl der Seiten

9

ISSN

0132-6414

Publikationsdatum

11.2021

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik und Astronomie (insg.)