Electrical Properties of Thin ZrSe3Films for Device Applications
- verfasst von
- Lars Thole, Christopher Belke, Sonja Locmelis, Peter Behrens, Rolf J. Haug
- Abstract
Measurements of key properties of the two-dimensional transition metal trichalcogenide ZrSe3are reported. The bulk material was created by chemical vapor deposition and subsequently exfoliated to obtain thin films of varying thicknesses. The samples were then characterized by atomic force microscopy measurements and Raman spectroscopy and contacted by e-beam lithography. Electrical measurements give values for the band gap energy of 0.6 eV increasing for thinner samples. Transistor measurements show ZrSe3to be an n-type semiconductor. By looking at several samples with varying thicknesses, it was possible to determine a mean free path of 103 nm for the bulk material which opens the possibility for new electronic devices.
- Organisationseinheit(en)
-
Institut für Festkörperphysik
Institut für Anorganische Chemie
Laboratorium für Nano- und Quantenengineering
QuantumFrontiers
PhoenixD: Simulation, Fabrikation und Anwendung optischer Systeme
- Typ
- Artikel
- Journal
- ACS Omega
- Band
- 7
- Seiten
- 39913-39916
- Anzahl der Seiten
- 4
- Publikationsdatum
- 08.11.2022
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Chemie (insg.), Chemische Verfahrenstechnik (insg.)
- Elektronische Version(en)
-
https://doi.org/10.1021/acsomega.2c04198 (Zugang:
Offen)
