Thickness-dependent gap energies in thin layers of Hf Te5
- verfasst von
- C. Belke, S. Locmelis, L. Thole, H. Schmidt, P. Behrens, R. J. Haug
- Abstract
Hafnium pentatelluride (Hf Te5) is a layered two-dimensional material with various exotic properties. It is thought to be a topological insulator. Whereas bulk Hf Te5 has a small band gap, single layers are predicted to be a quantum spin hall insulator with a large band gap. Here we measured band gap energies for samples with varying thicknesses and found a clear increase of gap energies for the thinner samples. With decreasing thickness an increase of the measured band gap energies from 40 to 304 meV is observed.
- Organisationseinheit(en)
-
Institut für Festkörperphysik
Institut für Anorganische Chemie
Laboratorium für Nano- und Quantenengineering
QuantumFrontiers
- Typ
- Artikel
- Journal
- 2D Materials
- Band
- 8
- ISSN
- 2053-1583
- Publikationsdatum
- 07.2021
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Chemie (insg.), Werkstoffwissenschaften (insg.), Physik der kondensierten Materie, Werkstoffmechanik, Maschinenbau
- Elektronische Version(en)
-
https://doi.org/10.1088/2053-1583/abf98b (Zugang:
Offen)
