Gradients in Three-Dimensional Core–Shell GaN/InGaN Structures: Optimization and Physical Limitations

verfasst von: Irene Manglano Clavero, Christoph Margenfeld, Jonas Quatuor, Hendrik Spende, Lukas Peters, Ulrich T. Schwarz, Andreas Waag
Abstract: Three-dimensional InGaN/GaN nano- and microstructures with high aspect ratios and large active sidewall areas are still of great interest in the field of optoelectronics. However, when grown by metalorganic chemical vapor deposition (MOCVD), their optical performance can be negatively affected by gradients in thickness and peak emission wavelength along their sidewalls, which is still a key obstacle for using such structures in commercial products. In this work, we present a detailed study on the different mechanisms causing this gradient, as well as means to alleviate it. Gas-phase mass transport and surface diffusion are found to be the two main processes governing the shell growth, and the predominance of one process over the other is varying with the geometry of the 3D structures as well as the spacing between them. Consequently, variations in temperature, which mainly affect surface diffusion, will have a stronger impact on structures with small separation between them rather than larger ones. On the other hand, variations in pressure modify gas-phase diffusion, and thus, structures with a large spacing will be more strongly affected. A proper design of the dimensions of 3D architectures as well as the separation between them may improve the gradient along the sidewalls, but a tradeoff with the active area per wafer footprint is inevitable.
Externe Organisation(en): Technische Universität Braunschweig
Technische Universität Chemnitz
Typ: Artikel
Journal: ACS Applied Materials Interfaces
Band: 14
Seiten: 9272–9280
Anzahl der Seiten: 9
ISSN: 1944-8244
Publikationsdatum: 23.02.2022
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Werkstoffwissenschaften (insg.)
Elektronische Version(en): https://doi.org/10.1021/acsami.1c19490 (Zugang: Offen)

BibTeX

@article{598f99e842df484f8e8d148c1b6227c9,
title = "Gradients in Three-Dimensional Core–Shell GaN/InGaN Structures: Optimization and Physical Limitations",
abstract = "Three-dimensional InGaN/GaN nano- and microstructures with high aspect ratios and large active sidewall areas are still of great interest in the field of optoelectronics. However, when grown by metalorganic chemical vapor deposition (MOCVD), their optical performance can be negatively affected by gradients in thickness and peak emission wavelength along their sidewalls, which is still a key obstacle for using such structures in commercial products. In this work, we present a detailed study on the different mechanisms causing this gradient, as well as means to alleviate it. Gas-phase mass transport and surface diffusion are found to be the two main processes governing the shell growth, and the predominance of one process over the other is varying with the geometry of the 3D structures as well as the spacing between them. Consequently, variations in temperature, which mainly affect surface diffusion, will have a stronger impact on structures with small separation between them rather than larger ones. On the other hand, variations in pressure modify gas-phase diffusion, and thus, structures with a large spacing will be more strongly affected. A proper design of the dimensions of 3D architectures as well as the separation between them may improve the gradient along the sidewalls, but a tradeoff with the active area per wafer footprint is inevitable.",
keywords = "3D structures, gas-phase diffusion, indium gradient, InGaN, microfins, nonpolar, surface diffusion, tapering",
author = "{Manglano Clavero}, Irene and Christoph Margenfeld and Jonas Quatuor and Hendrik Spende and Lukas Peters and Schwarz, {Ulrich T.} and Andreas Waag",
note = "Publisher Copyright: {\textcopyright} 2022 American Chemical Society. All rights reserved.",
year = "2022",
month = feb,
day = "23",
doi = "10.1021/acsami.1c19490",
language = "English",
volume = "14",
pages = "9272–9280",
journal = "ACS Applied Materials Interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "7",
}