Strain tunable quantum dot based non-classical photon sources

verfasst von: Jingzhong Yang, Michael Zopf, Fei Ding
Abstract: Semiconductor quantum dots are leading candidates for the on-demand generation of single photons and entangled photon pairs. High photon quality and indistinguishability of photons from different sources are critical for quantum information applications. The inability to grow perfectly identical quantum dots with ideal optical properties necessitates the application of post-growth tuning techniques via e.g. temperature, electric, magnetic or strain fields. In this review, we summarize the state-of-the-art and highlight the advantages of strain tunable non-classical photon sources based on epitaxial quantum dots. Using piezoelectric crystals like PMN-PT, the wavelength of single photons and entangled photon pairs emitted by InGaAs/GaAs quantum dots can be tuned reversibly. Combining with quantum light-emitting diodes simultaneously allows for electrical triggering and the tuning of wavelength or exciton fine structure. Emission from light hole exciton can be tuned, and quantum dot containing nanostructure such as nanowires have been piezo-integrated. To ensure the indistinguishability of photons from distant emitters, the wavelength drift caused by piezo creep can be compensated by frequency feedback, which is verified by two-photon interference with photons from two stabilized sources. Therefore, strain tuning proves to be a flexible and reliable tool for the development of scalable quantum dots-based non-classical photon sources.
Organisationseinheit(en): Institut für Festkörperphysik
Typ: Artikel
Journal: Journal of Semiconductors
Band: 41
ISSN: 1674-4926
Publikationsdatum: 01.2020
Publikationsstatus: Veröffentlicht
ASJC Scopus Sachgebiete: Elektronische, optische und magnetische Materialien, Physik der kondensierten Materie, Elektrotechnik und Elektronik, Werkstoffchemie
Elektronische Version(en): https://doi.org/10.1088/1674-4926/41/1/011901 (Zugang: Geschlossen)

BibTeX

@article{c0c1f5d9b9104285b161d71452c8b156,
title = "Strain tunable quantum dot based non-classical photon sources",
abstract = "Semiconductor quantum dots are leading candidates for the on-demand generation of single photons and entangled photon pairs. High photon quality and indistinguishability of photons from different sources are critical for quantum information applications. The inability to grow perfectly identical quantum dots with ideal optical properties necessitates the application of post-growth tuning techniques via e.g. temperature, electric, magnetic or strain fields. In this review, we summarize the state-of-the-art and highlight the advantages of strain tunable non-classical photon sources based on epitaxial quantum dots. Using piezoelectric crystals like PMN-PT, the wavelength of single photons and entangled photon pairs emitted by InGaAs/GaAs quantum dots can be tuned reversibly. Combining with quantum light-emitting diodes simultaneously allows for electrical triggering and the tuning of wavelength or exciton fine structure. Emission from light hole exciton can be tuned, and quantum dot containing nanostructure such as nanowires have been piezo-integrated. To ensure the indistinguishability of photons from distant emitters, the wavelength drift caused by piezo creep can be compensated by frequency feedback, which is verified by two-photon interference with photons from two stabilized sources. Therefore, strain tuning proves to be a flexible and reliable tool for the development of scalable quantum dots-based non-classical photon sources.",
keywords = "Quantum dot, entangled photons, fine structure splitting, on-chip, piezoelectric crystal, strain tuning",
author = "Jingzhong Yang and Michael Zopf and Fei Ding",
note = "The work was financially supported by the ERC Starting Grant No. 715770 (QD-NOMS) and the National Natural Science Foundation of China (No. 61728501).",
year = "2020",
month = jan,
doi = "10.1088/1674-4926/41/1/011901",
language = "English",
volume = "41",
journal = "Journal of Semiconductors",
issn = "1674-4926",
publisher = "IOS Press",
number = "1",
}