Pyramid Formation by Etching of In_xGa_1−xN /GaN Quantum Well Structures Grown on N-face GaN for Nanooptical Light Emitters

verfasst von

Uwe Rossow, Shawutijiang Sidikejiang, Samar Hagag, Philipp Horenburg, Philipp Henning, Rodrigo de Vasconcellos Lourenco, Heiko Bremers, Andreas Hangleiter

Abstract

While growth processes of (Formula presented.) /GaN quantum well (QW) structures on the Ga face of GaN buffer layers are already optimized to obtain high quantum efficiency, the growth on N-face has gained momentum only in the past years. Compared with Ga face (Formula presented.) layers are more stable on N face, and the surface can easily be structured by wet chemical etching, which usually leads to the formation of pyramids on the surface. This allows a new way to realize nanooptical light emitters, which offers the possibility to produce structures with similar emission properties. First, (Formula presented.) /GaN (single or multi-) QW structures on N-face GaN are grown. In a second step, pyramids are formed by KOH etching. Pyramids with smooth side facets of the type (Formula presented.) are demonstrated and sharp tips in the nanometer range can be achieved without any sign of damage. Transmission electron microscopy (TEM) reveals that (Formula presented.) quantum dot-like structures are present in the pyramids and in photoluminescence narrow emission lines are observed. The etching process depends on electrolyte composition and temperature, defects at the surface, and surface morphology. A better control of this process is required to achieve reproducible nanostructures.

Externe Organisation(en)

Technische Universität Braunschweig

Typ

Artikel

Journal

Physica Status Solidi (B) Basic Research

Band

258

ISSN

0370-1972

Publikationsdatum

08.10.2021

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Physik der kondensierten Materie

Elektronische Version(en)

https://doi.org/10.1002/pssb.202100085 (Zugang: Offen)